On the Enhancement of Silicon Chemical Vapor Deposition Rates at Low Temperatures
نویسندگان
چکیده
منابع مشابه
Simulations of Silicon Carbide Chemical Vapor Deposition
ii by using insulation material correctly, a more uniform temperature distribution can be obtained. A model for the growth of SiC is used to predict growth rates at various process parameters. A number of possible factors influencing the growth rate are investigated using this model. The importance of including thermal diffusion and the effect of etching by hydrogen is shown, and the effect of ...
متن کاملCatalytic chemical vapor deposition of single-wall carbon nanotubes at low temperatures.
We report surface-bound growth of single-wall carbon nanotubes (SWNTs) at temperatures as low as 350 degrees C by catalytic chemical vapor deposition from undiluted C2H2. NH3 or H2 exposure critically facilitates the nanostructuring and activation of sub-nanometer Fe and Al/Fe/Al multilayer catalyst films prior to growth, enabling the SWNT nucleation at lower temperatures. We suggest that carbo...
متن کاملPlasma-enhanced chemical vapor deposition of thick silicon nitride films with low stress on InP
• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website. • The final author version ...
متن کاملSimulation of Epitaxial Silicon Chemical Vapor Deposition in Barrel Reactors
the epitaxial silicon chemical vapor deposition by SiClq/H2 mixtures in a LPE 861 barrel reactor has been simulated by means of a detailed 2D model solved by the commercial finite element code FIDAP. Different reactor configurations (i .e., bell diameter, gas diffusers, susceptor tilting angle) and deposition conditions ( i .e . , flow rates and reactor pressure) have been examined. The simulat...
متن کاملGrowth of 3C-Silicon Carbide Nanowires using Chemical Vapor Deposition
The focus of this project was the characterization and growth of 3C-silicon carbide (b-SiC) nanowires using the vapor-liquid-solid method. Chemical vapor deposition (CVD) occurred at temperatures ranging from 1050oC to 1100oC using silane and propane as precursor gases. Experimentation with various surface preparations, including metal catalysts such as nickel (Ni) and aluminum (Al) deposited b...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Journal of The Electrochemical Society
سال: 1976
ISSN: 0013-4651,1945-7111
DOI: 10.1149/1.2133045